发明名称 Single ended dynamic sense amplifier
摘要 A single-ended sense amplifier circuit for sensing the state of a bitline in a memory array. The sense amplifier includes an output circuit having an input and an output, the output for indicating a state of the bitline in response to a bitline voltage level. A precharge circuit is coupled to the input for charging the input to a first voltage level when the input is decoupled from the bitline. A discharge circuit is coupled between the bitline and the input. In one embodiment, the discharge circuit includes a field effect transistor coupled as a cascode device for coupling and decoupling the input to the bitline. The discharge circuit couples the input to the bitline when the discharge voltage level exceeds a threshold voltage level of the discharge circuit. The sense amplifier circuit also includes a noise margin circuit coupled to the bitline for charging the bitline to a voltage level that is less than the first voltage level such that the discharge voltage level is less than the threshold voltage level by a predetermined noise margin voltage.
申请公布号 US5619149(A) 申请公布日期 1997.04.08
申请号 US19950389152 申请日期 1995.02.15
申请人 SUN MICROSYSTEMS, INC. 发明人 LEV, LAVI A.;ALLEN, MICHAEL
分类号 G11C17/18;G11C7/06;G11C11/419;G11C16/06;G11C17/00;H03K19/003;H03K19/0185;(IPC1-7):H03K19/094 主分类号 G11C17/18
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