发明名称 |
Single ended dynamic sense amplifier |
摘要 |
A single-ended sense amplifier circuit for sensing the state of a bitline in a memory array. The sense amplifier includes an output circuit having an input and an output, the output for indicating a state of the bitline in response to a bitline voltage level. A precharge circuit is coupled to the input for charging the input to a first voltage level when the input is decoupled from the bitline. A discharge circuit is coupled between the bitline and the input. In one embodiment, the discharge circuit includes a field effect transistor coupled as a cascode device for coupling and decoupling the input to the bitline. The discharge circuit couples the input to the bitline when the discharge voltage level exceeds a threshold voltage level of the discharge circuit. The sense amplifier circuit also includes a noise margin circuit coupled to the bitline for charging the bitline to a voltage level that is less than the first voltage level such that the discharge voltage level is less than the threshold voltage level by a predetermined noise margin voltage.
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申请公布号 |
US5619149(A) |
申请公布日期 |
1997.04.08 |
申请号 |
US19950389152 |
申请日期 |
1995.02.15 |
申请人 |
SUN MICROSYSTEMS, INC. |
发明人 |
LEV, LAVI A.;ALLEN, MICHAEL |
分类号 |
G11C17/18;G11C7/06;G11C11/419;G11C16/06;G11C17/00;H03K19/003;H03K19/0185;(IPC1-7):H03K19/094 |
主分类号 |
G11C17/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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