| 摘要 |
PROBLEM TO BE SOLVED: To suppress the wiring resistance due to the carbonization of a metal wiring layer when simultaneously baking silicon nitride substrate and metal wiring layer in a silicon nitride wiring board by simultaneous baking. SOLUTION: A silicon nitride wiring board 1 has a silicon nitride substrate 2 in multiple-layer structure and a metal wiring layer 3 being provided on the surface of inside the silicon nitride substrate 2. The silicon nitride substrate 2 contains at least one type which is selected from tantalum carbide, niobium carbide, titanium nitride, and tungsten single substance. The tantalum carbide, niobium carbide, titanium nitride, and tungsten single substance are a reduced product which is generated by a reducing substance containing carbon when tantalum oxide, niobium oxide, titanium oxide, and tungsten oxide which are added to the raw material of the silicon nitride substrate 2 are reduced when a substrate is baked. |
