| 摘要 |
PROBLEM TO BE SOLVED: To secure contact between a conductive-type region and a drain/source region by patterning a gate electrode and a wiring with a second mask having an edge line crossing the edge line of a first mask and masking them and forming the drain/source region. SOLUTION: A region 11 for eliminating a gate oxide film and a region 12 for eliminating a second polysilicon layer are shifted left and right along a line A-A' in advance at a side which opposed a drain/source region and a part 11a where the region 11 advances toward the right and a part 12a where a region 12 advances toward the left always oppose a drain/source region. As a result, a region which is formed after the part of the region 11 of a gate oxide film is eliminated and a region which is formed after the second polysilicon layer is left along the region 12 mutually overlap and inevitably contact each other since the regions 11 and 12 are mutually mixed up together. |
