| 摘要 |
PROBLEM TO BE SOLVED: To prevent a check pattern from being deformed in a photolithography process. SOLUTION: For instance, a first wiring layer 5-1, a BPSG film 4, and a field oxide film 2-2 are formed under a through-hole main scale pattern 7-2A and a resist vernier scale pattern 9-2A used for reading deviation in a lithography process where a second wiring conductive film 8 is patterned, whereby a pattern is protected against deformation caused by defocus of the resist vernier scale pattern 9-2A. |
