发明名称 |
Method of making light valve device using semiconductive composite substrate |
摘要 |
A process for manufacturing a semiconductor device comprises forming an SOI substrate by depositing an insulating film of silicon dioxide on a surface of a temporary silicon substrate, thermally bonding a semiconductor substrate of single crystal silicon on a surface of the insulating film, and polishing the semiconductor substrate to form a single crystal semiconductor thin film. A semiconductor integrated circuit is then formed in the single crystal semiconductor thin film. Thereafter, a support substrate is fixedly adhered in face-to-face relation to a surface of the semiconductor integrated circuit opposite to the temporary substrate. The temporary substrate is then removed to expose a surface of the insulating film. The exposed surface of the insulating film is then subjected to a treatment including at least forming an electrode.
|
申请公布号 |
US5618739(A) |
申请公布日期 |
1997.04.08 |
申请号 |
US19950459834 |
申请日期 |
1995.06.02 |
申请人 |
SEIKO INSTRUMENTS INC. |
发明人 |
TAKAHASHI, KUNIHIRO;KOJIMA, YOSHIKAZU;TAKASU, HIROAKI;MATSUYAMA, NOBUYOSHI;NIWA, HITOSHI;YOSHINO, TOMOYUKI;YAMAZAKI, TSUNEO |
分类号 |
C25F3/04;G02F1/1335;G02F1/1362;H01L21/336;H01L21/762;H01L21/77;H01L21/84;(IPC1-7):H01L21/84 |
主分类号 |
C25F3/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|