| 摘要 |
PROBLEM TO BE SOLVED: To produce a stably window material free from the generation of peeling and cracking by shielding the surface of the base material other than the thin film forming face from the electric field by inert element plasma. SOLUTION: A metallic oxide thin film is formed on an SiO2 series base material by a sputtering method. At this time, sputtering is executed in such a manner that an inert element gas is used as a discharge gas, and the surface of the base material other than the face on which the thin film shall be formed is shielded from the electric field by inert gas plasma. It is applied to a transparent ceramics substrate as a window material to form a coating film excellent in fluorine plasma resistance. At this time, the sputtering is executed while the side face side and back face side of the substrate are shielded from the electric field by inert gas plasma, by which an Al2 O3 thin film is formed. This Al2 O3 thin film is preferably composed of amorphous one, and the film thickness is regulated to about 0.1 to 20μm. Thus, the Al2 O3 thin film showing excellent corrosion resistances to halogen gases and halogen plasma can uniformly be produced.
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