| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an electrode on a conductivity type semiconductor layer which is capable of good ohmic contact and excellent in crystallinity. SOLUTION: This semiconductor device has a P-type side electrode on a P-type semiconductor layer composed of II-IV group compound semiconductor which contains Zn and Se. The P-type semiconductor layer 7 has nitrogen containing region films 8 whose acceptor concentration is greater than that of the P-type semiconductor layer 7, in the vicinity of the P-type side electrode 9 side. |
