| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a wafer holder in a high-speed heat treatment with a uniform gas flow and a high ramp rate. SOLUTION: Three bar-shaped supporting members 20 are mounted at the point of cylindrical pole member 19 using a joining member 21. A plate 22 is supported by the bar-shaped supporting members 20. Heat radiation is not transmitted in the plate 22 and the plate 22 has a large radiation ratio and a large absorption factor of heat radiation. A supporting pole member 12 is provided in the pole member 19, and three bar-shaped supporting members 13 are mounted on the top of the supporting pole member 12, while a ring- shaped tray 14 is mounted on the bar-shaped supporting member 13. A wafer 15 is mounted on the tray 14. The face of the wafer 15 and the face of the plate 22 are put in parallel. When the wafer 15 is at a low temperature, the wafer 15 is put in contact with the plate 22, and when the temperature of the wafer 15 is over a given level, the wafer 15 is removed from the plate 22. Then, a process gas is fed thereto.</p> |
