| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to increase the information holding time in the memory cell of a semiconductor integrated circuit device having a DRAM by setting a precharge voltage to be applied to a data line except at a power source voltage and to the voltage value except the half of the power source voltage. SOLUTION: When a precharge voltage is represented by VP, the precharge voltage VP can be set to 0<VP<VDD/2. The VDD means the power source voltage. Thus, the difference between the 'H' potential of a memory cell storing 'H' information and a reference potential can be increased by the amount lowered at the potential of the precharge voltage VP from the VDD/2. The charge amount of the cell can be apparently increased. Accordingly, even if the leakage current at the cell side is large, the information holding time of the cell can be increased. |
