| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a good contact at an interface between a solder ball bump and a base metal, by carrying out a pretreatment step before a solder-film formation step using a plasma treatment system with at least two high-frequency power supplies for controlling plasma generation and a substrate bias voltage independently. SOLUTION: A BLM film 4 as a metallic barrier part made of laminated film of Cr, Cu or Au is formed at an opening of a surface protective film 3 made of polyimide film on an aluminum electrode pad 2 in a semiconductor element 1. A thick resist film 6 having an opening 5 with a given diameter is formed adjacently to the BLM film 4. After scum 6a at the bottom in the opening is removed, a vapor deposition film made of solder is formed over a substrate already subjected to a pretreatment step before the film formation. Solder is melted in a heat treatment step to form a solder ball bump 15. As a result, a good electric contacted state at an interface between a solder ball bump and a base metal can be obtained.</p> |
