| 摘要 |
PROBLEM TO BE SOLVED: To obtain a carbonaceous antireflection target material for forming a high performance antireflection layer on a semiconductor substrate and a method for forming a resist pattern using the target material. SOLUTION: The antireflection target material comprises a glassy carbon plate having such crystal properties as the size Lc(002) of crystal lattice is 1.5-3.0nm, and the mean interplanar spacing d002 of graphite hexagonal net plane layer is 0.345-0.360nm. A pattern is formed by sputtering the antireflection target material to form an antireflection layer on the photoresist layer of a semiconductor substrate, exposing the resist layer through a mask and then performing the etching. |
