| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device having fine contact holes and a method for manufacturing the memory device. SOLUTION: A semiconductor memory device contains a plurality of first conductive layer patterns formed in the cell area of a semiconductor substrate, interlayer insulating layers, a plurality of second conductive layer patterns intersecting the first conductive layer patterns at right angles, etching stop layer patterns 49 which respectively protect the upper surface and side wall of the second conductive layer pattern, and contact holes which are formed through a photoetching process by using spacers as masks. Since the photoresist patterns used for forming the contact holes are formed in lines, the photo lithography process can be performed easily even when the sizes of buried contact holes 55 become smaller owing to the increase of the degree of integration and no matching is required in the direction protected by the etching stop layer patterns 49 and spacers. |
