| 摘要 |
PROBLEM TO BE SOLVED: To enhance the repairing rate of defects through simple circuitry by providing complementary data lines, and specific pull-up resistor means, main word lines, subword lines and logic gate circuit. SOLUTION: The static RAM comprises complementary data lines D, /D, pull-up resistor means Q5, Q6 having relatively high resistance, and a main word line MWL disposed to intersect the complementary data lines D, /D while having high level corresponding to the pull-up voltage of non-select level complementary data line. The static RAM further comprises a plurality of subword lines SWL arranged in parallel with the main word lines MWL while being divided therefor, and a logic gate circuit G receiving a select signal for the main word line MWL and a memory array select signal corresponding to the subword line SWL and driving the subword lines to be selected among the plurality of the subword lines SWL to a high level. |
