| 摘要 |
PROBLEM TO BE SOLVED: To suppress the dimensional fluctuation of a resist pattern formed on a substrate to be machined, especially within a chip. SOLUTION: A silicon wafer 1 is spin coated with a positive photoresist composed of novolac resin and naphthoquinone diazide photosensitizer. It is then baked to form a photoresist layer 2 which is exposed with a pattern. Subsequently, tetramethylammonium (TMAH) 0.14M aqueous solution 8 suspending microparticles 7 of acrylic acid-acrylamide-IPN gel is dripped onto the photoresist layer 2. The wafer is held stationary under that state and then the TMAH aqueous solution 8 is washed off together with the gel microparticles 7 thus obtaining a desired resist pattern. |
