发明名称 WAVELENGTH CHANGEABLE SEMICONDUCTOR LASER
摘要 <p>PROBLEM TO BE SOLVED: To make wavelength changeable by a single control current (voltage), and obtain large wavelength change. SOLUTION: An active stripe 2 in which optical gain is generated by current injection, a light beam sweeper 3 which is arranged on one end of the active stripe 2 and adjusts the output angle of a laser beam, a lens 4 as the mechanism for collimating a light, and a diffraction grating 5 are integrated on a semiconductor substrate 1a. A laser resonator is constituted between one, end portion of the active stripe 2 (cleavage surface of semiconductor or the like) and the diffraction grating 5. The incident angle of the laser light from the active stripe 2 into the diffraction grating 5 is adjusted by changing the beam angle with the light beam sweeper 3. When the beam angle is changed with the light beam sweeper 3, the wavelength of the return light to the active stripe 2 is changed, so that the oscillation wavelength can be changed.</p>
申请公布号 JPH0992933(A) 申请公布日期 1997.04.04
申请号 JP19950266106 申请日期 1995.09.21
申请人 NEC CORP 发明人 YAMAGUCHI MASAYUKI
分类号 H01S3/10;H01S5/00;H01S5/026;(IPC1-7):H01S3/18 主分类号 H01S3/10
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