| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor element wherein a plurality of semiconductor element layers capable of epitaxial growth and metal layers are interlaminated on the same substrate and electrically connected in series through ohmic contact. SOLUTION: A superlattice structure is formed by interlaminating NiIn0.24 Al0.76 well layers 3 and n-In0.53 Ga0.47 As barrier layers 4. The thicknesses of the NiIn0.24 Al0.76 wall layer 3 and the n-In0.53 Ga0.47 As barrier layer 4 are set in such a manner that transmission electron waves 14 mutually emphasize phases, to the vacuum level of the NiIn0.24 Al0.76 well layer 3 and the energy level of a conduction band 11 and valence band 13 of the n-In0.53 Ga0.47 As barrier layer 4 or to the effective mass of charges 16 in the NiIn0.24 Al0.76 well layer 3 and the n-In0.53 Ga0.47 As barrier layers 4. |
