发明名称 THERMAL TREATMENT DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To prevent a coating film on the surface of a wafer from varying in thickness throughout the surface of the wafer in a thermal treatment and solvent comprised in a coating film vaporized through a thermal treatment from leaking out of a thermal treatment device. SOLUTION: A thermal treatment device 1 is composed of a hermetically closed chamber 12 where a wafer 40 on which a coating film is formed is housed, a heating means 13 which heats the inside of the hermetically closed chamber 12, a hood 14 which surrounds the hermetically closed chamber 12, and an exhausting means 15 which exhausts the inside of the hood 14.
申请公布号 JPH0992595(A) 申请公布日期 1997.04.04
申请号 JP19950245624 申请日期 1995.09.25
申请人 SONY CORP 发明人 IKEDA RIKIO
分类号 G03F7/38;H01L21/027;(IPC1-7):H01L21/027 主分类号 G03F7/38
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