发明名称 ELECTRICALLY WRITABLE NONVOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To minimize stress in cell transistor by extending the write set time when a predetermined repeating times of write and erase operation is exceeded. SOLUTION: Upon receiving an automatic write command, an automatic program control circuit 109 begins operation and an oscillator 110 generating a basic clock for controlling each circuit is started. A nonvolatile counter 113 counts up every time when automatic erase is executed. When the number of rewriting times stored in the nonvolatile counter 113 reaches a predetermined times, a decision is made that deterioration has progressed and a programming pulse width is set. A rewriting time is also set appropriately as required.</p>
申请公布号 JPH0991979(A) 申请公布日期 1997.04.04
申请号 JP19950274886 申请日期 1995.09.27
申请人 NEC CORP 发明人 SATO TOSHIYA
分类号 G11C17/00;G11C16/02;G11C16/32;G11C16/34;H01L21/8247;H01L27/115;(IPC1-7):G11C16/06 主分类号 G11C17/00
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