| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an electric charge generator in which electric charges can be easily generated by a driving voltage of several tens. SOLUTION: A drive line 3 comprising a P-well layer is provided on an n-type semiconductor substrate 1, and an N<+> layer 4 is diffused and formed on the surface of the P-well layer driving line 3. A p-n junction diode formed of the P-well layer driving line 3 and the N<+> layer 4 is set as an electron emitting part, and a backward bias is applied to the diode to cause avalanche breakdown, thereby electrons or charges are emitted.</p> |
