发明名称 PLASMA CVD
摘要 <p>PROBLEM TO BE SOLVED: To enhance the workability while reducing the cost by replacing a substrate base easily at the time of replacing the electrode. SOLUTION: The plasma CVD comprises a reaction chamber 1 having an evacuation port 2 and a reaction gas introduction pipe 5, a base 9 for mounting a substrate 10 in the reaction chamber 1, a heater block 11 for heating the substrate base 9, and a high frequency electrode 3 disposed oppositely to the substrate base 9 and fed with a high frequency power, wherein any one or both contact faces of the heater block 11 and the substrate base 9 are roughened 17 by blasting. Alternatively, an insulation film 18 is formed or a different kind of the metal plate 19 is sandwiched between the substrate base 9 and the block 11 in order to prevent seizure thus facilitating removal of the substrate base 9 from the heater block 11.</p>
申请公布号 JPH0992706(A) 申请公布日期 1997.04.04
申请号 JP19950244843 申请日期 1995.09.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUZUKI NAOKI;MIYAKE KIYOO;TSUTSUI YUJI;ARAI YASUSHI;SAWADA KAZUYUKI
分类号 C23C16/44;C23C16/458;H01L21/205;H01L21/31;H01L21/68;H01L21/683;(IPC1-7):H01L21/68 主分类号 C23C16/44
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