METHOD OF FORMING THE METAL WIRING ON THE SEMICONDUCTOR DEVICE

摘要

The method for forming metal interconnection of semiconductor device improves the characteristics of step coverage and reliability of the device by depositing metal layer three steps instead of physical vapor deposition. The method comprises steps; a) forming the first metal layer on the whole substrate; b) forming metal insulation layer on the first metal layer; c) heating treatment and flowing through the second metal layer which is formed on the substrate; and d) forming the third metal layer on the whole substrate.