| 摘要 |
<p>A metal stack (35) for use in an integrated circuit demonstrating improved electromigration properties. A base layer (31) of approximately 185Å of titanium is formed on an ILD followed by the formation of the bulk conductor layer (32) such as an aluminum-copper alloy layer. A capping layer (33) of approximately 185Å of titanium is formed on the bulk conductor layer (32). Finally, an antireflective coating (ARC) (34) of titanium nitride is formed on the capping layer (33).</p> |
