The invention concerns a method of producing a gate electrode in a microelectronic circuit. According to the invention, an auxiliary layer (14) is applied and structured. On the resultant flanks a spacer (5) is produced which is used directly to form the gate electrode.
申请公布号
WO9712390(A1)
申请公布日期
1997.04.03
申请号
WO1996DE01845
申请日期
1996.09.26
申请人
SIEMENS AKTIENGESELLSCHAFT;ENDERS, GERHARD;RAUTER, GERHARD
