发明名称 Integrated memory capacitor for dynamic random access memory
摘要 The capacitor has a pair of capacitor electrodes (E1,E2), one of which is embedded in the other. The embedded electrode (E1) is provided by at least 2 successive conductive layers (1,2,3...) made of different materials, at least one of which is aluminium (Al), or an electrically conductive Al alloy, or titanium, or a conductive titanium alloy. Pref. the adjacent layers of the embedded electrode are of different cross-sectional width. The other electrode (E2) is pref. used in common for a number of embedded electrodes for respective integrated capacitors. Each 2 adjacent memory cells within the memory pref. use an integrated capacitor and a capacitor of different type, e.g. a plate capacitor or a trench capacitor, respectively.
申请公布号 DE19536465(A1) 申请公布日期 1997.04.03
申请号 DE19951036465 申请日期 1995.09.29
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 MUELLER, KARLHEINZ, 84478 WALDKRAIBURG, DE
分类号 H01L21/02;H01L27/108;(IPC1-7):H01G4/30;H01G4/008;H01G4/10 主分类号 H01L21/02
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