| 摘要 |
The invention provides a plasma processing apparatus and method, which controls the temperature of those portions in the processing chamber to which reaction products or gaseous reaction products generated during plasma processing adhere, thereby minimizing the generation of foreign matters and ensuring high yields. A plasma processing gas is supplied to the plasma generation chamber 10 whose pressure is maintained at a predetermined value. Provided in the plasma generation chamber are a specimen mount 11 on which to mount an object to be processed and an evacuation mechanism 16 that evacuates the plasma generation chamber. The inner sidewall portion of the plasma generation chamber is provided with temperature controllers 34,35. The plasma processing can be performed with few foreign matters generated and with high yields. <IMAGE> |
