发明名称 |
Method of manufacturing a thin film transistor |
摘要 |
<p>The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern (35) on a ground surface, a second process of forming a thin film (41) on the ground surface and a surface of the resist pattern (35), and a third process of removing the resist pattern (35) to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out. The lift off is either wet or dry, the resist pattern (35) being removed using a laser.</p> |
申请公布号 |
EP0766296(A2) |
申请公布日期 |
1997.04.02 |
申请号 |
EP19960115592 |
申请日期 |
1996.09.27 |
申请人 |
SONY CORPORATION |
发明人 |
GOSAIN PAL, DHARAM;WESTWATER, JONATHAN;NAKAGOE, MIYAKO;USUI, SETSUO |
分类号 |
G03F7/42;H01L21/027;H01L21/306;H01L21/336;H01L29/786;(IPC1-7):H01L21/336;H01L21/311 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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