发明名称 Method of manufacturing a thin film transistor
摘要 <p>The manufacturing processes can be simplified and the reliability can be improved. A method of processing a thin film includes a first process of selectively forming a resist pattern (35) on a ground surface, a second process of forming a thin film (41) on the ground surface and a surface of the resist pattern (35), and a third process of removing the resist pattern (35) to selectively remove the thin film deposited on the former, i.e., carrying out the lift-off, thereby the thin film process for a desired pattern being carried out. The lift off is either wet or dry, the resist pattern (35) being removed using a laser.</p>
申请公布号 EP0766296(A2) 申请公布日期 1997.04.02
申请号 EP19960115592 申请日期 1996.09.27
申请人 SONY CORPORATION 发明人 GOSAIN PAL, DHARAM;WESTWATER, JONATHAN;NAKAGOE, MIYAKO;USUI, SETSUO
分类号 G03F7/42;H01L21/027;H01L21/306;H01L21/336;H01L29/786;(IPC1-7):H01L21/336;H01L21/311 主分类号 G03F7/42
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