发明名称 High voltage power integrated circuit with level shift operation and without metal crossover
摘要 Level shift devices are formed in the high voltage termination region of an integrated circuit. The level shift devices provide a connection between the higher voltage, floating circuit and a ground referenced lower voltage circuit. The structure of the level shift devices eliminates the need for a high voltage connector to cross over the low voltage connector.
申请公布号 GB9702762(D0) 申请公布日期 1997.04.02
申请号 GB19970002762 申请日期 1997.02.11
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人
分类号 H01L21/8234;H01L27/02;H01L27/06;H01L27/07;H01L27/088;H01L29/06;H01L29/78 主分类号 H01L21/8234
代理机构 代理人
主权项
地址