Voltage regulator for semiconductor non-volatile electrically programmable memory devices

摘要

A voltage (Vpd) regulator (3) for electrically programmable non-volatile memory cells (2) comprises a gain stage (diff1) which is supplied a voltage (hv) from a voltage booster (4) connected to a supply voltage (Vcc) reference, having an input terminal connected to an output (A) of a voltage divider (8) and an output terminal connected to at least one transistor (M2) of a pull-up and pull-down differential pair to output (OUT) the regulated voltage (Vpd) for programming at least one column or bit line of the memory cells (2), and further comprises a second gain stage (diff2) having an input terminal connected to a second output (B) of the divider (8). The second stage (diff2) has an output connected to turn off the second transistor (M3) in the complementary pair upon the regulated voltage (Vpd) exceeding a predetermined value. <IMAGE>