| 摘要 |
PCT No. PCT/JP96/01710 Sec. 371 Date Feb. 4, 1997 Sec. 102(e) Date Feb. 4, 1997 PCT Filed Jun. 20, 1996 PCT Pub. No. WO97/01190 PCT Pub. Date Jan. 9, 1997An InGaAlP-type light-emitting diode chip (1) includes a plurality of material layers (2-6) in lamination. The chip has a rectangular surface perpendicular to the laminating direction of the material layers (2-6). Each side of the rectangular surface is no greater than 0.25 mm in length. A light-emitting diode is arranged to include the light-emitting diode chip (1) and, when driven by a forward current of 2-5 mA for light emission, can provide the same luminance as a conventional light-emitting diode driven by a forward current of about 25 mA for light emission.
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