发明名称 |
Diode and semiconductor device having a controlled intrinsic or low impurity concentration region between opposite conductivity type semiconductor regions |
摘要 |
A diode is provided comprising first and second semiconductor regions. The first semiconductor region is of one conductivity type and the second is of the opposite conductivity type. A third region is provided which is either an intrinsic semiconductor region or a low concentration region. The low concentration region has an impurity concentration lower than that of the first and second semiconductor layers. The third region is arranged to separate the first and second semiconductor regions. A control electrode region is provided over the third region through an insulative film.
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申请公布号 |
US5616944(A) |
申请公布日期 |
1997.04.01 |
申请号 |
US19940348198 |
申请日期 |
1994.11.28 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
MIZUTANI, HIDEMASA;KOIZUMI, TORU |
分类号 |
H01L29/68;H01L27/06;H01L29/739;H01L29/861;(IPC1-7):H01L29/76;H01L29/94;H01L31/075;H01L31/105 |
主分类号 |
H01L29/68 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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