| 摘要 |
In a nonvolatile semiconductor device having a floating gate formed over a semiconductor substrate, a control gate formed over the floating gate, a source region and a drain region formed within the semiconductor substrate, an erase or write operation is carried out by Fowler-Nordheim tunneling, so that carriers such as electrons and holes are expelled from the floating gate to one of the source and drain regions. Thereafter, carriers of a channel current flowing between the source and drain regions are enhanced and injected into the floating gate, thus converging a threshold voltage of the device.
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