| 发明名称 |
Vertical diffusion furnace having improved gas flow |
| 摘要 |
A vertical diffusion furnace comprising; a quartz tube, a plurality of wafers loaded into the quartz tube, and a gas inlet formed in the quartz tube proximate a lowermost wafer in the plurality of wafers, and providing reactive gases into the quartz tube.
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| 申请公布号 |
US5616025(A) |
申请公布日期 |
1997.04.01 |
| 申请号 |
US19950558398 |
申请日期 |
1995.11.16 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHOI, SANG-KOOK;KWON, CHUNG-HWAN;KIM, HONG-KEUN |
| 分类号 |
H01L21/22;C30B31/16;(IPC1-7):F27D3/12 |
主分类号 |
H01L21/22 |
| 代理机构 |
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代理人 |
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