Method and reference standards for measuring overlay in multilayer structures, and for calibrating imaging equipment as used in semiconductor manufacturing

摘要

Imaging instruments for inspecting products, such as semiconductor chips, are calibrated by providing a reference test structure having features which can be located by electrical measurements not subject to tool-induced shift and wafer-induced shift experienced by the imaging instrument. The reference test structure is first qualified using electrical measurements, and is then used to calibrate the imaging instrument. The electrical measurements may be made by forcing a current between a plurality of spaced reference features and an underlying conductor, or may be made by capacitive, conductive, magnetic, or impedance-measuring techniques. Capacitive techniques may also be used to detect features not susceptible of resistance measurement, such as dielectric or insulative materials, or metallic structures not accessible for forcing a current therethrough. A series of test structure elements may be fabricated with one component of each being spaced at progressively greater distances from an arbitrary baseline, such that a null-overlay element may be identified.