发明名称 Method and apparatus for controlling temperature in rapid heat treatment system
摘要 A temperature control method in a rapid heat treatment apparatus comprising simulatively heating dummy wafers in a process tube and previously detecting and grasping by temperature sensors a wafer temperature rising pattern, a heater temperature rising pattern and an internal atmosphere temperature rising pattern, arranging wafers to be processed in the process tube, detecting a temperature of each zone and that of each heater element by the temperature sensors, upon heating the wafers, and controlling each heater element on the basis of the detected temperatures and the wafer, heater and internal atmosphere temperature rising patterns by a controller to rapidly and uniformly raise the temperature of each wafer until the temperature of the wafers in each zone reaches the intended one and becomes stable.
申请公布号 US5616264(A) 申请公布日期 1997.04.01
申请号 US19940259180 申请日期 1994.06.13
申请人 TOKYO ELECTRON LIMITED;TOKYO ELECTRON TOHOKU LIMITED 发明人 NISHI, KATSUO;TERADA, KAZUO;OHKASE, WATARU;YAMAGA, KENICHI
分类号 C23C16/46;C30B25/10;C30B31/12;G05D23/19;(IPC1-7):H05B1/02 主分类号 C23C16/46
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