发明名称 Multiple gated MOSFET for use in DC-DC converter
摘要 A power MOSFET includes a pair of electrically isolated gates having different gate widths. The MOSFET is connected in a switching mode DC-DC converter, with the gates being driven by a pulse width modulation (PWM) control to vary the duty cycle of the gate drive signal and thereby regulate the output voltage of the DC-DC converter. In light load conditions, the larger gate is disconnected from the PWM control to reduce the gate capacitance which must be driven by the PWM control. In normal load conditions, the larger gate is connected to the PWM control to reduce the on-resistance of the MOSFET. Both of these operations increase the efficiency of the DC-DC converter.
申请公布号 US5616945(A) 申请公布日期 1997.04.01
申请号 US19950542611 申请日期 1995.10.13
申请人 SILICONIX INCORPORATED 发明人 WILLIAMS, RICHARD K.
分类号 H01L27/04;H01L27/06;H01L29/06;H01L29/10;H01L29/423;H01L29/78;H02M3/155;H02M3/158;H03K17/12;H03K17/687;(IPC1-7):H01L27/108;H01L29/76 主分类号 H01L27/04
代理机构 代理人
主权项
地址