发明名称 |
High speed bipolar transistor using a patterned etch stop and diffusion source |
摘要 |
A bipolar transistor (100) and a method for forming the same. A base-link diffusion source layer (118) is formed over a portion of the collector region (102). The base-link diffusion source layer (118) comprises a material that is capable of being used as a dopant source and is capable of being etched selectively with respect to silicon. A base electrode (114) is formed over at least one end portion of the base-link diffusion source layer (118) and the exposed portions of the base-link diffusion source layer (118) are removed. An extrinsic base region (110) is diffused from the base electrode (114) and a base link-up region (112) is diffused from the base-link diffusion source layer (118). Processing may then continue to form an intrinsic base region (108), emitter region (126), and emitter electrode (124).
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申请公布号 |
US5616508(A) |
申请公布日期 |
1997.04.01 |
申请号 |
US19950370137 |
申请日期 |
1995.01.09 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
JOHNSON, F. SCOTT |
分类号 |
H01L29/73;H01L21/331;H01L21/8249;H01L27/06;H01L29/732;(IPC1-7):H01L21/265 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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