Vorrichtung zum Legieren von Halbleiterkristallen,申请号DE1962T021690-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Vorrichtung zum Legieren von Halbleiterkristallen
摘要
申请公布号	DE1230917(B)	申请公布日期	1966.12.22
申请号	DE1962T021690	申请日期	1962.03.03
申请人	TELEFUNKEN PATENTVERWERTUNGSGESELLSCHAFT M.B.H.	发明人	HEISE DIPL.-PHYS. GUENTHER
分类号	H01L21/00;H01L21/24	主分类号	H01L21/00
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Low-noise high efficiency bias generation circuits and method

Powershift transmission

METHODS OF USE FOR HSV-1 AND HSV-2 VACCINES

A RADIO SYSTEM AND A METHOD FOR RELAYING PACKETIZED RADIO SIGNALS

PHOSPHOR, METHOD FOR PRODUICNG PHOSPHOR, PHOSPHOR-CONTAINING COMPOSITION, LIGHT-EMITTING DEVICE, ILLUMINATING DEVICE, AND IMAGE DISPLAY DEVICE

POLYMER COMPOSITIONS CONTAINING GRAPHENE SHEETS AND GRAPHITE

ACCESS CONTROL IN RADIO ACCESS NETWORK HAVING PICO BASE STATIONS

CAPILLARY COMPOSITION FOR TREATING HAIR

2,4,6-TRIFLUORO-N-[6-(1-METHYL-PIPERIDIN-4-CARBONYL)-PYRIDIN-2-YL]-BENZAMIDE FOR THE TREATMENT OF MIGRAINE VIA THE ORAL OR INTRAVENOUS ROUTE

TRACHEOSTOMA VALVE

SINGLE SWITCHED DUAL FIRING CONDITION COMBUSTION NAILER

METAL TREATMENT

SYNCHRONIZATION METHODS AND SYSTEMS

DATA CENTER THERMAL MONITORING

INFRARED ELECTRONIC ARTICLE SURVEILLANCE SYSTEM WITH DYNAMIC PASSCODE PROTECTION

TISSUE LIGATION DEVICES AND CONTROLS THEREFOR

ELECTRICAL DEVICE MANUFACTURING TECHNIQUES