| 摘要 |
PROBLEM TO BE SOLVED: To improve the quality, yield and productivity of a single crystal with simple control by pulling up the single crystal under a specified condition at the time of pulling up the single crystal from the molten liquid in a crucible. SOLUTION: So that density of stacking fault caused by oxidation (OSF) may become small, the single crystal is pulled up by renewing a pulling up speed pattern at the last batch so as to be pulled up with such speed as much as possible, together with seeking shift from a complete round at each region of the single crystal in the last batch and thereby making fall the shift within a tolerance range. Moreover, the single crystal pulling up speed pattern is left as being set up in advance, and a maximum diameter and a minimum diameter of the single crystal are measured by one-dimensional camera or two-dimensional camera during single crystal pulling up, and the shift from the complete round is sought so that the density of OSF may become small together with making fall the shift within the tolerance range and the single crystal is pulled up while correcting the pulling up speed pattern so as to be pulled up with such speed as much as possible. |
