发明名称 EXHAUST GAS TREATMENT APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To prevent that the discharge port of an exhaust gas treatment chamber is closed by a reaction product in an exhaust gas treatment apparatus and to detect the closure by the reaction product at an initial stage when the closure state is generated. SOLUTION: The bottom part of an exhaust gas treatment apparatus 1 is formed into a funnel-shaped bottom part 14 and a drain pipe 10 is arranged to the leading end part 5 of the funnel-shaped bottom part 14 and a recessed piping part 17 is provided to the drain pipe 13 of a temporary accumulation tank 11 and a pitot electrostatic pipe current meter 18 is arranged thereto and the signal output of the pitot electrostatic pressure pipe current meter 18 and the signal output of a pressure gauge 6 are connected to an alarm 19. By this constitution, the periodic arranging period of the exhaust gas treatment apparatus can be extended and productivity is enhanced. When such a state that the discharge port of the exhaust gas treatment apparatus is closed is generated, this state can be detected at an initial stage and the exhaust gas treatment apparatus is operated until the treatment of a semiconductor wafer during treatment by a semiconductor manufacturing apparatus is completed and the loss of the semiconductor wafer can be prevented.</p>
申请公布号 JPH0985036(A) 申请公布日期 1997.03.31
申请号 JP19950243369 申请日期 1995.09.21
申请人 SONY CORP 发明人 YAMAZAKI KAZUYOSHI;HORINOUCHI SATOSHI
分类号 B01D53/34;B01D53/77;C23C14/24;H01L21/205;(IPC1-7):B01D53/34 主分类号 B01D53/34
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