| 摘要 |
PROBLEM TO BE SOLVED: To improve the size controllability of wirings, etc., in a device by improving the deterioration of the controllability of phase difference accompanying the thickness distribution of the formed films arising at the time of film formation and further, using a mask formed by this technique. SOLUTION: This process for producing a mask for exposure comprises forming translucent phase shift patterns by forming a translucent phase shift film 102 on a light-transmissible substrate 101 and selectively etching this phase shift film 102 with photosensitive resin patterns 103 as a mask. The substrate 101 exposed at the time of etching the phase shift film 102 is simultaneously etched as well. The etching conditions are so set that the ratio (R0/R1) of the etching rate R1 of the phase shift film 102 and the etching rate R0 of the signal 101 is equalized to the ratio (n1-1)/(n0-1)} of the value obtd. by subtracting 1 from the refractive index n0 of the substrate 101 and the value obtd. by subtracting 1 from the refractive index n1 of the phase shift film 102. |
