| 摘要 |
<p>PROBLEM TO BE SOLVED: To conduct an efficient crystallization of a semiconductor thin film, which is used as the active layer of a thin film transistor which is formed by lamination in a thin film semiconductor device. SOLUTION: In order to manufacture a thin film semiconductor device, a film- forming process is first performed and an amorphous semiconductor thim film 2 is formed on the surface of an insulating substrate 1, which extends in the longitudinal direction (a direction X) and the width direction, which intersect orthogonally each other. Then, an annealing process is performed and energy is applied from the outside to convert the thin film 2 from the amorphous thin film into a polycrystalline thin film. After this, a thin film transistor is formed by laminating using the thin film 2 as its active layer. In the annealing process, comparatively low-energy ultraviolet rays 23 formed linearly along the width direction of the substrate 1 are emitted to the substrate 1 from the rear side of the substrate 1, while a comparatively high-energy laser beam 4 shaped linearly along the width direction of the substrate 1 similarly is emitted to the substrate 1 from the surface side of the substrate 1 in such a way that the beam 4 is rougly aligned with the irradiated region of the rays 23. At this time, the substrate 1 is moved in the direction X relatively to the irradiated region.</p> |
