| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent the degradation in the throughput in an impurity injecting stage and to provide a semiconductor device having high reliability by providing a structure which does not cause the deterioration in insulating films for auxiliary capacitors without increasing the impurity injecting stage. SOLUTION: This semiconductor device has a transparent isolating substrate 1, first electrodes 105 for constituting the capacitors formed on this substrate 1, the insulating films 107a which are the capacitor parts of the capacitors formed on the first substrates 105, second electrodes 112 for constituting the capacitors formed on the insulating films 107a and switching elements connected to the second electrodes 112 of the capacitors. Further, the device includes earmarks 105a which are formed of the same material as for the first electrode 105 on the substrate 1 and are used at the introduction of an impurity into the high-resistance semiconductor regions of the switching elements.</p> |
