| 摘要 |
PROBLEM TO BE SOLVED: To eliminate the decrease in peak current density even when heat is applied with high peak current density in J-V characteristics by δ doping with dopant at the surface of a P<+> type compound semiconductor layer or an n<+> type compound semiconductor layer to the opposite side to a tunnel junction boundary surface. SOLUTION: A p-type GaAs layer (p-type layer) 12 is grown on a p-type GaAs substrate 1, and p<++> type δ-doping 13 is conducted on the surface of the layer 12. A p<+> type GaAs layer (P<+> type layer) 14 and an n<+> type GaAs layer (n<+> type layer) 15 are grown thereon, and n<++> δ-doping 16 is conducted on the surface of the n<+> layer 15. Further, an n-type GaAs layer (n-type layer) 17 is grown thereon. Thus, p-type dopant is δ-doped between the layers 12 and 14, and n-type dopant is δ-doped between the layers 15 and 17, and hence further higher carrier concentration layer can be formed, and peak current density can largely be improved. |
