| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide the manufacture of a field emission type element with high performance by forming a field emitter with a small radius of curvature and apex angle at the end in the opening of a gate in a self-matched and well- controlled manner in a simple process. SOLUTION: The first recess 12 with a vertical side wall is formed in a substrate 11, a polycrystal silicon film 13 as material for a gate electrode is formed on the substrate 11 by using a film accumulation method of poor step coverage and a silicon oxidized film 14 is formed by oxidizing the polycrystal silicon film 13, where the polycrystal silicon film 13 is left only outside the first recess 12 and the second recess 15 with a sharp end is formed on the first recess 12. An emitter electrode material film 16 is formed on the silicon oxidized film 14 for a field emitter 17 to be filled in the second recess 15 so that an opening 18 can be made in the emitter electrode material film 16 to each the oxidized silicon film 14, 11b around a field emitter 17 for removal.</p> |
