| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin-film transistor having excellent characteristics and high yield and manufacture thereof, and to provide a liquid-crystal display, which has superior and uniform characteristics even on a large-sized picture plane and in which a flicker and burning are reduced. SOLUTION: This transistor has a process, in which a light-shielding high resistance layer 103 is formed onto a transparent insulating substrate 101 and patterned, a process, in which a conductor layer is formed on the upper side of the light-shielding high resistance layer and patterned to a gate electrode 104, a process, in which a gate insulating layer 105 and a conductor layer 106 are shaped successively on the upper side of the gate electrode and these each layer is patterned, a process, in which a contact layer 107 and the conductor layer are formed in succession from the upper side of the semiconductor layer and a process, in which the contact layer and the conductor layer on the side upper than the semiconductor layer are removed and a source electrode 108 and a drain electrode 109 are formed.</p> |
