| 摘要 |
PROBLEM TO BE SOLVED: To form resist patterns having the smallest standard deviation value of the pattern sizes within and between substrates (the highest dimensional accuracy). SOLUTION: This method comprises determining the conditions for forming the resist patterns in a resist pattern forming stage having a resist film forming stage, a resist film baking stage, an exposing stage and a developing stage. Plural sheets of the substrates on which the resist films are formed, are prepd., and backed under respectively different baking conditions. The baking temp. at which the change in the uniformity within the substrates or the film decreasing amt. of the residual film thicknesses of the resist films with respect to the change in the baking time of the resist films is smallest when the resist films baked under the respective baking conditions are subjected to a dissolution treatment to partly dissolve the respective resist films without exposing these substrates is determines as the temp. conditions for baking the resist films. The baking time when the uniformity within the substrate of the residual film thicknesses of the rest film is best or the film decreasing amt. is smallest at this baking temp. is determined as the baking time conditions for the resist films. |
