发明名称 FORMATION OF SEMICONDUCTOR STRUCTURE AND UNCONFORMABILITY FILM SPACER USED FOR IT
摘要 PROBLEM TO BE SOLVED: To provide film spacers for improved side walls in a semiconductor structure. SOLUTION: Film spacers 32A and 32B are made of an nonconformal organic material, such as polyimide, acrylate, methacrylate, and various photoresist compositions. The spacers 32A and 32B are formed on side walls through a process including the formation of overhung structures 24 and 26. The spacers 32A and 32B can be used for various purposes, such as the plotting of side walls, control of dopant diffusion in FETs, formation of borderless contact structures, manufacture of resistors by using FETs, etc.
申请公布号 JPH0982947(A) 申请公布日期 1997.03.28
申请号 JP19960192522 申请日期 1996.07.22
申请人 INTERNATL BUSINESS MACH CORP <IBM> 发明人 JIYON EDOWAADO KURONIN;PATORISHIA EREN MAAMIRION;ANSONII PARAGONIA;BAANADETSUTO AN PIAASON;DENISU AASAA SHIYUMITSUTO
分类号 H01L29/78;H01L21/02;H01L21/033;H01L21/329;H01L21/336;(IPC1-7):H01L29/78 主分类号 H01L29/78
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