发明名称 SEMICONDUCTOR STORAGE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage device which can hold data when a power supply is cut off, and reduce power consumption. SOLUTION: This storage device is provided with a transistor T2 and a capacitor C1 which consists of a storage electrode 22 and a plate electrode 21. The storage electrode 22 is connected with a source or a drain electrode 23 of the transistor T2 . A plate voltage generating circuit 1 generates a potential to be applied to the plate electrode 21. The impedance between the circuit 1 and the plate electrode 21 is high when the power supply voltage is cut off by a switch element T1 , as compared with the time when the power supply voltage is given. Before the power supply voltage is cut off, and the output voltage of the plate voltage generating circuit 1 starts to decrease, the impedance becomes high. After the power supply is switched on and the output voltage of the plate voltage generating circuit 1 is stabilized, the impedance becomes low.
申请公布号 JPH0982917(A) 申请公布日期 1997.03.28
申请号 JP19950238869 申请日期 1995.09.18
申请人 TOSHIBA CORP 发明人 NOGUCHI MITSUHIRO
分类号 H01L21/8242;H01L27/108 主分类号 H01L21/8242
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