| 摘要 |
PROBLEM TO BE SOLVED: To provide a DRAM wherein imperfect contact is not generated when alignment deviation of a gate and a contact pattern which are arranged in parallel is generated. SOLUTION: A DRAM is provided with the following; a plurality of gate electrodes 13 arranged in parallel on a semiconductor substrate 11, first insulating films 14 formed above the gate electrodes 13, second insulating films 15 formed on the side surfaces of the gate electrodes 13, third insulating films 16 buried in the spaces between the gate electrodes 13, and contact holes formed by partially eliminating the third insulating films 16. In the contact hole, two facing surfaces are constituted of the third insulating films 16, and the other two surfaces are constituted of the second insulating films 15. |
