发明名称 ACTIVE MATRIX SUBSTRATE AND PRODUCTION OF ACTIVE MATRIX SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To lower the ratio at which amorphous silicon TFTs occupy pixel electrode regions, to improve the opening rate of pixel electrodes and to save the energy of a device by arranging the amorphous silicon TFTs and column selection lines so as to three-dimensionally superpose both on each other. SOLUTION: The column selection lines 112 and the TFTs 17 are laminated via surface protective films 110 and are so wired that at least the upper parts of the channel protective films 105 of the TFTs 17 are covered by the column selection lines 112. The column selection lines 112 are formed three-dimensionally on the amorphous silicon TFTs 17 in such a manner, by which the formation of the TFTs 17 within the pixel regions and the disturbance in the transparency of the light are prevented. The energy required for the electric power of the back light is saved by improving the opening rate of the active matrix substrate 16 and improving the screen luminance. Further, the irradiation of the TFTs 17 with the external light is prevented and the generation of light leakage current is prevented. The images having excellent light resistance and a good contrast are obtd.</p>
申请公布号 JPH0980481(A) 申请公布日期 1997.03.28
申请号 JP19950235024 申请日期 1995.09.13
申请人 TOSHIBA ELECTRON ENG CORP;TOSHIBA CORP 发明人 SHIMANO TAKUYA;KITAZAWA TOMOKO;HANAZAWA YASUYUKI;IIZUKA TETSUYA
分类号 G02F1/136;G02F1/1368;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/136
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